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| Part Number | 2SD2241 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2241 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon NPN Transistor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications 2SD2241 Unit: mm • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitt. |
| Features | ltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VECF VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1.5 A VCE = 2 V, IC = 3 A IC = 3 A, IB = 6 mA IC = 3 A, IB = 6 mA IE = 1 A, IB = 0 Min Typ. Max Unit ― ― 100 2000 1000 ― ― ― ― ― ― ― ― ― ― ― 20 µA 2.5 mA ―V ― ― 1.5 V 2.0 V 2.0 V Turn-on time Switching time Storage time Fall tim. |
| Part Number | 2SD2241 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1.5A, VCE= 3V ·Complement to Type 2SB1481 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . |
| Features | CTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 20 μA IEBO Emitter Cutoff Cur. |
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