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| Part Number | 2SD2222 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2222 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PL package www.datasheet4u.com ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD2222 Fig.1 simplified outline (TO-3PL) an. |
| Features | ter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ;IB=0 IC=7A ;IB=7mA IC=7A ;IB=7mA VCB=160V; IE=0 VCE=160V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 1000 3500 20 MIN 160 www.datasheet4u.com 2SD2222 SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO h. |
| Part Number | 2SD2222 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High DC Current Gain- : hFE= 3500( Min.) @(IC= 7A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max)@ (IC= 7A, IB= 7mA) ·Complement to Type 2SB1470 ·Minimum Lot-to-Lot variations for robust device performance and reliable o. |
| Features | rwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 7mA VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 7mA ICBO Collector Cutoff Current VCB= 160V; IE= 0 ICEO Collector Cutoff Current VCE= 160V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gai. |
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