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| Part Number | 2SD2057 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2057 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN Transistor |
| Description | Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit: mm s Features q q 15.0± 0.3 11.0± 0.2 Solder Dip q q q 16.2± 0.5 3.2 2.3 q Incorporating a built-in damper diode Reduction of a parts count and simplification of a circuit are allowed Hi. |
| Features |
q q
15.0± 0.3 11.0± 0.2
Solder Dip
q q q
16.2± 0.5 3.2 2.3
q
Incorporating a built-in damper diode Reduction of a parts count and simplification of a circuit are allowed High breakdown voltage with high reliability High-speed switching Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 1500 1500 7 20 5 4 100 3 150 –55 . |
| Part Number | 2SD2057 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VEBO IC ICM IB PARAMETER Collector-base voltag. |
| Features | IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE-1 hFE-2 fT VF ts tf DC current gain DC current gain Transition frequency Diode forward voltage Storage time IC=5A;IB1=-IB2=1.2A;LLeak=5µH Fall time IC=1A ; VCE=5V IC=5A ; VCE=10V IC=1A ; VCE=10V;f=0.5MHz IC=-6A ;IB=0 8 4.5 MIN 7 www.datasheet4u.com 2SD2057 SYMBOL V(BR)EBO VCEsat VBEsat TYP. MAX UNIT V 8.0 1.5 30 0.3 V V µA mA 15 2 -2. |
similar datasheet
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|---|---|---|---|---|
| 1 | 2SD2050 |
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| 2 | 2SD2051 |
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| 3 | 2SD2051 |
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| 7 | 2SD2053 |
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| 8 | 2SD2053 |
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| 9 | 2SD2055 |
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| 10 | 2SD2058 |
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Desde 2024. D4U Semiconductor.
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