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| Part Number | 2SD2025 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2025 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1344 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MA. |
| Features | V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA; IE= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE DC Current Gain IC= 2A; VCE= 3V 1000 20000 COB Output Capacitance IE. |
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Desde 2024. D4U Semiconductor.
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