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| Distributor | Stock | Price | Buy |
|---|
2SD1761 |
| Part Number | 2SD1761 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1187 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T. |
| Features | 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V COB Output Capaci. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1760 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SD1760 |
GME |
Power Transistor |
|
| 3 | 2SD1760 |
Rohm |
Power Transistor |
|
| 4 | 2SD1760 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SD1760 |
Kexin |
NPN Transistors |
|
| 6 | 2SD1762 |
Rohm |
Power Transistor |
|
| 7 | 2SD1762 |
GME |
Power Transistor |
|
| 8 | 2SD1762 |
JCST |
NPN Transistor |
|
| 9 | 2SD1762 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1762 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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