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| Part Number | 2SD1616A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1616A |
| Manufacturer | SEMTECH |
| Title | NPN Silicon Transistor |
| Description | ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be m. |
| Features | at VCE=2V, IC=100mA R O Y at VCE=2V, IC=1A Base Emitter Voltage 2) at VCE=2V ,IC=50mA Collector Cutoff Current at VCB=60V/120V Emitter Cutoff Current at VEB=6V Collector Saturation Voltage 2) at IC=1A, IB=50mA Base Saturation Voltage 2) at IC=1A, IB=50mA Gain Bandwidth Product at VCE=2V, IC=-100mA Output Capacitance at VCB=10V, f=1MHz Turn-on Time at VCC=10V, IC=-100mA Storage Time . |
| Part Number | 2SD1616A |
| Manufacturer | Weitron Technology |
| Title | NPN Transistors |
| Description | www.DataSheet4U.com 2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temp. |
| Features | untinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=2.0 Vdc) DC Current Gain (IC=1.0 mAdc, VCE= 2.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter on Voltage (1) (I C =50mA, VCE =2.0V) Current-Gain-Bandwidth Product (IC= 100 mAdc, VCE=2.0 Vdc, . |
| Part Number | 2SD1616A |
| Manufacturer | Micro Electronics |
| Title | NPN Silicon Transistor |
| Description | 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. 4.68 (0.18) 4.6 (0.18) 0.51 (0.02) TO-92B 3.58 B CE (0.14) 10 0.4 (0.016) 12.7 (0.5) min. 2.54 (0.1) Bottom view Unit: mm(inch) 0.45 (0.018) ABSOLUTE MAXIMUM RA. |
| Features | ase-Emitter Saturation Voltage MIN MAX 100 100 350 700 0.5 1.2 TYP. TYP. TYP. TYP. UNIT CONDITIONS nA VCB=60V IE=0 nA VEB=6V IC=0 VCE=2V IC=100mA VCE=2V IC=1A mV VCE=2V IC=50mA V IC=1A IB=50mA V IC=1A IB=50mA pF VCB=10V IE=0 IC=100mA MHz VCE=2V µs Vcc=10V IC=100mA µs IB1=-IB2=10mA µs VBE(off)=-2 to 3V 170 45 600 19 100 0.07 0.95 0.07 MICRO ELECTRONICS LTD. G/F, 38 Hung To Road, Kwun Tong, Kowlo. |
| Part Number | 2SD1616A |
| Manufacturer | NEC |
| Title | NPN SILICON EPITAXIAL TRANSISTOR |
| Description | DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = . |
| Features |
• Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with the 2SB1116 and 1116A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current (DC) IC(DC) C. |
| Part Number | 2SD1616A |
| Manufacturer | SeCoS |
| Title | NPN Transistor |
| Description | Elektronische Bauelemente 2SD1616A 1A , 120V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power dissipation CLASSIFICATION OF hFE (1) Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-U Range 135~270 200~400 300~600 TO-92 AD. |
| Features |
Power dissipation CLASSIFICATION OF hFE (1) Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-U Range 135~270 200~400 300~600 TO-92 AD B REF. A Millimeter Min. Max. 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 E CF F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 GH Emitter Collector Base J Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 2. |
| Part Number | 2SD1616A |
| Manufacturer | WEJ |
| Title | NPN Transistor |
| Description | RoHS 2SD1616A 2SD1616A TRANSISTOR (NPN) TO-92 FEATURE DPower dissipation TPCM: 0.75 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A V(BR)CBO: 120 V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BSAE 123 ELECTRICA. |
| Features | DPower dissipation TPCM: 0.75 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A V(BR)CBO: 120 V OOperating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BSAE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Collector-base breakdown voltage NCollector-emitter breakdown voltage OEmitter-base brea. |
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