Part Number | 2SD1432 |
Distributor | Stock | Price | Buy |
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Part Number | 2SD1432 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S. |
Features | (sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance tf Fall Time IE= 0 ; VCB= 10V;ftest=1.0MHz IC= 5A , IB= 1A 2S. |
Part Number | 2SD1432 |
Manufacturer | Toshiba |
Title | NPN Transistor |
Description | : SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VCBO=1500V . Low Saturation Voltage . High Speed : v CE(sat)=5V (Max.) (I C =5A, : tf=1.0^s (Max.) . Glass Passivated Collector-Base Junction I B=1A) Unit in ram 1S0MAX. 03.6±CL2 MAXIM. |
Features | . High Voltage : VCBO=1500V . Low Saturation Voltage . High Speed : v CE(sat)=5V (Max.) (I C =5A, : tf=1.0^s (Max.) . Glass Passivated Collector-Base Junction I B=1A) Unit in ram 1S0MAX. 03.6±CL2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) SYMBOL vCBO . |
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