2SD1405 Datasheet. existencias, precio

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2SD1405 Silicon NPN Transistor


2SD1405
Part Number 2SD1405
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2SD1405
Part Number 2SD1405
Manufacturer INCHANGE
Title NPN Transistor
Description ·High DC Current Gain : hFE= 200(Min) @IC= 0.5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 1A ·Collector Power Dissipation of 25W@ TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier.
Features S MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.02A 1.0 V VBE(on) Base -Emitter On Voltage IC= 0.5A ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE DC Current Gain IC= 0.5A; VCE= 5V 200 1200 COB Output.

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