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| Part Number | 2SD1213 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1213 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB904 APPLICATIONS ·Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outli. |
| Features | ltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=; IC=1mA; IE=0 IE=1mA; IC=0 IC=8A; IB=0.4A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=10A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 30 60 6 www.datasheet4u.com 2SD1213 SYM. |
| Part Number | 2SD1213 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector Current:: IC= 20A ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 8A ·Complement to Type 2SB904 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for large current switching of relay drivers, high-speed inverters,co. |
| Features | ector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain IC= 10A; VC. |
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| 1 | 2SD1210 |
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| 2 | 2SD1211 |
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| 3 | 2SD1212 |
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| 4 | 2SD1212 |
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| 5 | 2SD1212 |
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| 6 | 2SD1214 |
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| 7 | 2SD1216 |
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| 8 | 2SD1217 |
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Si NPN Planar Transistor |
|
| 9 | 2SD1218 |
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|
| 10 | 2SD1200 |
ROHM |
NPN Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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