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| Part Number | 2SD1163 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1163 |
| Manufacturer | Hitachi Semiconductor |
| Title | NPN TRANSISTOR |
| Description | 2SD1163, 2SD1163A Silicon NPN Triple Diffused Application TV horizontal deflection output Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratings (Ta = 25°C) Rating Item Collector to base voltage Collector to emitter voltage Emitter to base vo. |
| Features | V Test conditions VCB = 300 V, IE = 0 VCB = 350 V, IE = 0 I C = 10 mA, RBE = ∞ I E = 10 mA, IC = 0 VCE = 5 V, IC = 5 A*1 I C = 5 A, IB = 0.5 A*1 I C = 5 A, IB = 0.5 A*1 I CP = 3.5 A, I B1 = 0.45 A DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test. VCE (sat) VBE (sat) tf 2 2SD1163, 2SD1163A Maximum Collector Dis. |
| Part Number | 2SD1163 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-em. |
| Features | IC=5A, IB=0.5A 2SD1163A IC=5A, IB=0.5A VCB=300V;IE=0 VCB=350V;IE=0 IC=5A ; VCE=5V 25 1.0 1.2 5 5 V mA mA V V CONDITIONS MIN 120 V TYP MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage V(BR)EBO Emitter-base breakdown voltage 2SD1163 VCEsat Collector-emitter saturation voltage VBEsat Base-emitter saturation voltage 2SD1163 2SD1163A ICBO Collector cut-offcurrent hFE DC current. |
| Part Number | 2SD1163 |
| Manufacturer | Renesas |
| Title | Silicon NPN Transistor |
| Description | To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i. |
| Features | ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration . |
| Part Number | 2SD1163 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UN. |
| Features | own Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 300V ; IE= 0 hFE DC Current Gain IC= 5A ; VCE= 5V tf Fall Time ICP= 3.5A; IB1= 0.45A 2SD1163 MIN TYP. MAX UNIT 120 V 6 V 2.0 V 1.2 V 5 mA 25 0.5 μs NOTICE： ISC reserves the rights to make . |
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| 1 | 2SD1160 |
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| 2 | 2SD1162 |
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| 3 | 2SD1163A |
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| 4 | 2SD1163A |
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| 5 | 2SD1163A |
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| 6 | 2SD1163A |
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| 7 | 2SD1163A |
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| 8 | 2SD1164-Z |
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| 9 | 2SD1164-Z |
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| 10 | 2SD1165A |
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Desde 2024. D4U Semiconductor.
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