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2SD1069 |
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| Part Number | 2SD1069 |
| Manufacturer | INCHANGE |
| Description | ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Coll. |
| Features | llector-Emitter Sustaining Voltage IC= 50mA; L= 50mH V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1A; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICES Collector Cutoff Current VCE= 250V; VBE= 0 hFE DC Current Gain IC= 5A ; VCE= 1.5V fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V VECF C-E Diode Forward Voltage IF= 6A tf Fall Time ICP= 5A; IB1(end)= 0.5A 2SD1069 MIN TYP. MAX UNIT 150 V 300 V 6 V 1.5 V 1.5 V 1 mA 10 . |
| Datasheet |
 2SD1069 Data Sheet
PDF 210.36KB |
| Distributor | Stock | Price | Buy |
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2SD1069 |
| Part Number | 2SD1069 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | 2SD1 069 SILICON NPN DOUBLE DIFFUSED TYPE (PCT PROCESS) TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: . Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTI. |
| Features | . Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEB. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1060 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1060 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SD1060 |
UTC |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 4 | 2SD1060 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1060 |
ON Semiconductor |
Bipolar Transistor |
|
| 6 | 2SD1061 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1061 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SD1061 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD1062 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD1062 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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