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2SD1069 Silicon NPN Power Transistor Datasheet


2SD1069

INCHANGE
2SD1069

Part Number 2SD1069
Manufacturer INCHANGE
Description ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust d...
Features llector-Emitter Sustaining Voltage IC= 50mA; L= 50mH V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1A; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICES ...

Document Datasheet 2SD1069 datasheet pdf (210.36KB)



2SD1069

Toshiba
2SD1069
Part Number 2SD1069
Manufacturer Toshiba
Title Silicon NPN Transistor
Description 2SD1 069 SILICON NPN DOUBLE DIFFUSED TYPE (PCT PROCESS) TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATU.
Features . Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Base Current Collector Power.

Document 2SD1069 datasheet pdf



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