Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SD1023 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1023 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220 package ·High DC current gain ·DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Co. |
| Features | tor cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Turn-on time Storage time Fall time IC=3A; IB=5mA RL=10@ VBB2=4V CONDITIONS IC=3A; IB=5mA IC=3A ;IB=5mA VCE=200V; IB=0 VCB=200V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=3V IC=0.5A ; VCE=10V 1500 MIN www.datasheet4u.com 2SD1023 SYMBOL VCEsat VBEsat ICEO ICBO IEBO hFE fT ton ts tf TYP. MAX 1.5 2.0 0.. |
| Part Number | 2SD1023 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM. |
| Features | gton Power Transistor 2SD1023 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 5mA ICBO Collector Cutoff Current VCB= 200V; IE= 0 ICEO Collector Cutoff Current VCE= 200V; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE DC . |
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| 2 | 2SD1022 |
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| 4 | 2SD1024 |
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| 6 | 2SD1024 |
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| 7 | 2SD1025 |
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| 8 | 2SD1025 |
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| 9 | 2SD1025 |
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| 10 | 2SD1026 |
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Desde 2024. D4U Semiconductor.
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