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| Distributor | Stock | Price | Buy |
|---|
2SC5764 |
| Part Number | 2SC5764 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators applications. ABSOLUTE MAXIMUM RA. |
| Features | V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 h. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5761 |
NEC |
NPN SiGe RF TRANSISTOR |
|
| 2 | 2SC5763 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SC5763 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC5765 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC5765 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 6 | 2SC570 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 7 | 2SC5700 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC5700 |
Renesas |
Silicon NPN Transistor |
|
| 9 | 2SC5702 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 10 | 2SC5702 |
Hitachi |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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