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| Part Number | 2SC5218 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC5218 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Transistor |
| Description | ·High Gain Bandwidth Product fT = 9 GHz TYP. ·High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF ~ UHF amplifiers. ABSOLUTE MAX. |
| Features | 10μA ; IE= 0 15 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 1 μA ICEO Collector Cutoff Current VCE= 9V; RBE= ∞ 1 mA IEBO Emitter Cutoff Current VEB= 1.5V; IC= 0 10 μA hFE DC Current Gain IC= 20mA ; VCE= 5V 50 250 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V 6.0 9.0 GHz COB Output Capacitance IE= 0 ; VCB= 5V;f= 1.0MHz 0.8 1.4 pF PG Power Gain IC= 20mA ; . |
| Part Number | 2SC5218 |
| Manufacturer | Renesas |
| Title | Silicon NPN Epitaxial Type Transistor |
| Description | To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i. |
| Features |
• High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “YK –”. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Free Datasheet http://www.datasheet4u.com/ . |
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Desde 2024. D4U Semiconductor.
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