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| Part Number | 2SC5197 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC5197 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity . |
| Features | pecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 2.0 V VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 4A ; VCE= 5V VCB= 120V ; IE= 0 1.5 V 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC=. |
| Part Number | 2SC5197 |
| Manufacturer | Toshiba Semiconductor |
| Title | NPN TRANSISTOR |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications 2SC5197 Unit: mm • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltag. |
| Features | IC = 6 A, IB = 0.6 A VBE VCE = 5 V, IC = 4 A fT VCE = 5 V, IC = 1 A Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification R: 55 to 110, O: 80 to 160 JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.) Min Typ. Max Unit ― ― 5.0 µA ― ― 5.0 µA 120 ― ― V 55 ― 160 35 75 ― ― 0.35 2.0 V ― 0.95 1.5 V ― 30 ― MHz ― 120 ― pF 1 2004-07-07 Marking TOSHIBA C5197 Characterist. |
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| 7 | 2SC5194-T1 |
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| 9 | 2SC5195 |
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| 10 | 2SC5196 |
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Desde 2024. D4U Semiconductor.
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