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| Part Number | 2SC5101 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC5101 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1909 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM. |
| Features | Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V Switching times ton Turn-on Time tstg Stora. |
| Part Number | 2SC5101 |
| Manufacturer | Sanken electric |
| Title | NPN TRANSISTOR |
| Description | 2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 200 V VCEO 140 V VEBO 6 V IC 10 A IB 4 A PC 80(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °. |
| Features |
+0.2 -0.1
5.45±0.1
5.45±0.1
0.65
+0.2 -0.1
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Part No.
B C E b. Lot No.
Collector Current IC(A) IB=400mA
I C – V CE Characteristics (Typical) 10 300mA 200mA 150mA 8 100mA 75mA 6 50mA 4 20mA 2 10mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) . |
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Desde 2024. D4U Semiconductor.
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