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2SC4881 SILICON POWER TRANSISTOR

2SC4881


2SC4881
Part Number 2SC4881
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2SC4881

Toshiba Semiconductor
2SC4881
Part Number 2SC4881
Manufacturer Toshiba Semiconductor
Title NPN TRANSISTOR
Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications 2SC4881 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 0.8 μs (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base vol.
Features Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2006-11-10 Electrical Characteristics (Tc = 25°C) 2SC4881 Characteristics Collector cut-off current Emitter cut-o.

2SC4881

INCHANGE
2SC4881
Part Number 2SC4881
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high.
Features ISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC4881 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 125mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 2.5A; IB= 125mA VCB= 50V ; IE= 0 1.3 V 1 μA IEBO Emitter Cutoff Current .

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