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| Part Number | 2SC4688 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC4688 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 5A ·Complement to Type 2SA1803 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applic. |
| Features | Semiconductor 2SC4688 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Cu. |
| Part Number | 2SC4688 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PFM package ·Complement to type 2SA1803 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PFM) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SY. |
| Features | oltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=5A;IB=0.5 A IC=3A ; VCE=5V VCB=80V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 MIN 80 SYMBOL V(BR )CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB 2SC4688 TYP. MAX UNIT V 2.0. |
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| 2 | 2SC4681 |
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| 7 | 2SC4685 |
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| 10 | 2SC4687 |
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Desde 2024. D4U Semiconductor.
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