2SC4533 Datasheet. existencias, precio

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2SC4533 SILICON POWER TRANSISTOR


2SC4533
Part Number 2SC4533
Distributor Stock Price Buy
INCHANGE
2SC4533
Part Number 2SC4533
Manufacturer INCHANGE
Title NPN Transistor
Description · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE M.
Features unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4533 CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cuto.
Panasonic Semiconductor
2SC4533
Part Number 2SC4533
Manufacturer Panasonic Semiconductor
Title NPN TRANSISTOR
Description Power Transistors 2SC4533 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 I Features • High-speed switching • High collector to base voltage VCBO • Wide area of safe operation .
Features
• High-speed switching
• High collector to base voltage VCBO
• Wide area of safe operation (ASO)
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one / screw 14.0±0.5 Solder Dip (4.0) e pe) I Absolute Maximum Ratings TC = 25°C c e. d ty Parameter Symbol Rating Unit n d stag tinue Collector to base voltage VCBO .

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