Part Number | 2SC4533 |
Distributor | Stock | Price | Buy |
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Part Number | 2SC4533 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE M. |
Features | unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4533 CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cuto. |
Part Number | 2SC4533 |
Manufacturer | Panasonic Semiconductor |
Title | NPN TRANSISTOR |
Description | Power Transistors 2SC4533 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 I Features • High-speed switching • High collector to base voltage VCBO • Wide area of safe operation . |
Features |
• High-speed switching • High collector to base voltage VCBO • Wide area of safe operation (ASO) • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one / screw 14.0±0.5 Solder Dip (4.0) e pe) I Absolute Maximum Ratings TC = 25°C c e. d ty Parameter Symbol Rating Unit n d stag tinue Collector to base voltage VCBO . |
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1 | 2SC4531 |
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2 | 2SC4531 |
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3 | 2SC4532 |
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4 | 2SC4536 |
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9 | 2SC4538 |
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10 | 2SC4538R |
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