Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SC4466 |
| Part Number | 2SC4466 |
| Manufacturer | Unisonic Technologies |
| Title | NPN EPITAXIAL SILICON TRANSISTOR |
| Description | The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4466 is suitable for audio and general purpose, etc. FEATURES * High DC current gain . |
| Features | * High DC current gain * High collector-base breakdown voltage ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC4466L-x-T3P-T 2SC4466G-x-T3P-T TO-3P Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-019.c 2SC4466 Preliminary N. |
2SC4466 |
| Part Number | 2SC4466 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package ·Complement to type 2SA1693 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Colle. |
| Features | itance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=2A; IB=0.2A VCB=120V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=-0.5A ; VCE=12V 50 MIN 80 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT 2SC4466 TYP. MAX UNIT V 1.5 10 10 180 110 20 V µA µA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=3A;RL=10B IB1=- IB2=0.3A VCC=30V 0.16 2.60 0.34 µs µs µs hFE. |
2SC4466 |
| Part Number | 2SC4466 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1693 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXI. |
| Features | r Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 120V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 2A ; VCE= 4V COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz fT Current-Gain—Bandwidth Product IE= -0.5A ; VCE= 12V Switching Times ton Turn-on Time tstg Storage . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4460 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC4460 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 3 | 2SC4460 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 4 | 2SC4460M-SV |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC4461 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 2SC4461 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 7 | 2SC4462 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC4463 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC4467 |
Sanken electric |
Silicon NPN Transistor |
|
| 10 | 2SC4467 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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