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| Part Number | 2SC4304 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC4304 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=2. |
| Features | X UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.14A 0.5 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 0.7A; IB= 0.14A VCB= 800V; IE= 0 1.2 V 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE DC Current Gain IC= 0.7A; VCE= 4V 10 30 COB Output Capa. |
| Part Number | 2SC4304 |
| Manufacturer | Sanken electric |
| Title | Silicon NPN Transistor |
| Description | 2SC4304 Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 900 V VCEO 800 V VEBO 7 V IC 3(Pulse6) A IB 1.5 A PC 35(Tc=25. |
| Features |
n
1.35±0.15
1.35±0.15
2.54
0.85
+0.2 -0.1
2.54
0.45
+0.2 -0.1
2.2±0.2
2.4±0.2
Weight : Approx 2.0g
BCE
a. Part No. b. Lot No.
Collector Current IC(A)
I C – V CE Characteristics (Typical) 3 700mA 500mA 300mA 2 200mA 100mA 1 IB=50mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) Base-Emitter Saturation Voltage VBE(sat)(V) VCE(sat). |
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Desde 2024. D4U Semiconductor.
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