Part Number | 2SC4226 |
Distributor | Stock | Price | Buy |
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Part Number | 2SC4226 |
Manufacturer | Kexin |
Title | NPN Transistor |
Description | SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features Low noise and high gain. NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz High gain. |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA +0.1 1.3-0.1 1 +0.1 0.95-. |
Features | Low noise and high gain. NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz High gain. |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector +0.1 0.38-0.1 0-0.1 1 Emitter 2 Base 2 Base 3 Collector 3 Collecotr 1 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector . |
Part Number | 2SC4226 |
Manufacturer | UTC |
Title | NPN TRANSISTOR |
Description | The UTC 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has applied small mini mold package. ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC4226L-xxx-AL3-R 2SC4226. |
Features | TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL Collector Cut-off Current ICBO Emitter Cutoff Curren. |
Part Number | 2SC4226 |
Manufacturer | NEC |
Title | NPN Transistor |
Description | The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 1.25 ± 0.1 FEATURES 2.0 ± 0.2 +0.1 0.3 –0 0.. |
Features |
2.0 ± 0.2 +0.1 0.3 –0 0.65 0.65 • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e| = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Small Mini Mold Package EIAJ: SC-70 2 2 3 +0.1 0.3 –0 1 0.9 ± 0.1 PART NUMBER 2SC4226-T1 QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin3 (Collector)face to perforation side of the tape. Embossed tape 8 mm wide. . |
Part Number | 2SC4226 |
Manufacturer | GME |
Title | NPN Transistor |
Description | Production specification NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) Pb Lead-free 2SC4226 APPLICATIONS High frequency low noise amplifier. ORDERING INFORMATION Type No. Marking 2SC4226 R23/R24/R25 SOT-323 Package Code SOT-323. |
Features |
Low noise. High gain. Power dissipation.(PC=150mW) Pb Lead-free 2SC4226 APPLICATIONS High frequency low noise amplifier. ORDERING INFORMATION Type No. Marking 2SC4226 R23/R24/R25 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 20 VCEO Collector-Emitter Voltage 12 VEBO Emitter-Base Voltag. |
Part Number | 2SC4226 |
Manufacturer | SeCoS |
Title | NPN Transistor |
Description | Elektronische Bauelemente 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● Low noise ● High gain ● Power dissipation.(PC=150mW) APPLICATIONS ● High frequency low noise amplifier. CLASSIFICATION OF hFE Prod. |
Features |
● Low noise ● High gain ● Power dissipation.(PC=150mW) APPLICATIONS ● High frequency low noise amplifier. CLASSIFICATION OF hFE Product-Rank 2SC4226-P Range 40~80 Marking R23 2SC4226-Q 70~140 R24 2SC4226-R 125~250 R25 PACKAGE INFORMATION Package MPQ SOT-323 3K Leader Size 7’ inch SOT-323 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1. |
Part Number | 2SC4226 |
Manufacturer | Renesas |
Title | NPN Silicon RF Transistor |
Description | The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • High gai. |
Features |
• Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • 3-pin super minimold package • 8 mm wide embossed taping • Pin 3 (Collector) fa. |
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