Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC3737 |
| Part Number | 2SC3737 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUT. |
| Features | V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 5V Switching times ton Turn-On Time tstg Storage Time tf Fall Time IC= 2A. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC373 |
ETC |
Silicon NPN Transistor |
|
| 2 | 2SC3731 |
NEC |
NPN SILICON TRANSISTOR |
|
| 3 | 2SC3732 |
NEC |
NPN SILICON TRANSISTOR |
|
| 4 | 2SC3733 |
NEC |
NPN SILICON TRANSISTOR |
|
| 5 | 2SC3734 |
NEC |
NPN Transistor |
|
| 6 | 2SC3734 |
Kexin |
NPN Silicon Transistor |
|
| 7 | 2SC3734LT1 |
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 8 | 2SC3735 |
NEC |
NPN Transistor |
|
| 9 | 2SC3736 |
NEC |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
|
| 10 | 2SC3736 |
Guangdong Kexin Industrial |
NPN Silicon Epitaxial Transistor |
|
Desde 2024. D4U Semiconductor.
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