Part Number | 2SC3679 |
Distributor | Stock | Price | Buy |
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Part Number | 2SC3679 |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Power Transistors |
Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=2. |
Features | = 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 2A ; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.5A ; VCE= 12V COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz Switchi. |
Part Number | 2SC3679 |
Manufacturer | SavantIC |
Title | SILICON POWER TRANSISTOR |
Description | ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO V. |
Features | voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=2A; IB=0.4A IC=2A ;IB=0.4A VCB=800V ;IE=0 VEB=7V; IC=0 IC=2A ; VCE=4V IC=0.5A ; VCE=12V f=1MHz;VCB=10V 10 MIN 800 2SC3679 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 0.5 1.2 0.1 0.1 30 6 . |
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1 | 2SC3670 |
Toshiba Semiconductor |
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2 | 2SC3671 |
Toshiba Semiconductor |
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3 | 2SC3672 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
4 | 2SC3673 |
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Silicon NPN Transistor | |
5 | 2SC3675 |
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6 | 2SC3675 |
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7 | 2SC3676 |
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NPN Transistor | |
8 | 2SC3676 |
INCHANGE |
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9 | 2SC3677 |
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10 | 2SC3678 |
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