2SC3650 Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SC3650 General-Purpose Amplifier


2SC3650
Part Number 2SC3650
Distributor Stock Price Buy
Kexin
2SC3650
Part Number 2SC3650
Manufacturer Kexin
Title Transistor
Description SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Ab.
Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jun.
SeCoS
2SC3650
Part Number 2SC3650
Manufacturer SeCoS
Title NPN Silicon Epitaxial Planar Transistor
Description Elektronische Bauelemente 2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor FEATURES Small Flat Package. Large Current Capacity. High DC Current Gain Low VCE(sat) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 123 A EC 4 APPLICATION LF Amplifiers, Various Dr.
Features Small Flat Package. Large Current Capacity. High DC Current Gain Low VCE(sat) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 123 A EC 4 APPLICATION LF Amplifiers, Various Drivers, Muting Circuit MARKING CF PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch B F G H J D K L REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.3.
Jin Yu Semiconductor
2SC3650
Part Number 2SC3650
Manufacturer Jin Yu Semiconductor
Title Transistor
Description 2SC3650 SOT-89-3L TRANSISTOR (NPN) FEATURES  Small Flat Package  High DC Current Gain  Low VCE(sat)  Large Current Capacity APPLICATIONS  LF Amplifiers, Various Drivers, Muting Circuit 1. BASE 2. COLLECTOR 3. EMITTER MARKING:CF MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO.
Features
 Small Flat Package
 High DC Current Gain
 Low VCE(sat)
 Large Current Capacity APPLICATIONS
 LF Amplifiers, Various Drivers, Muting Circuit 1. BASE 2. COLLECTOR 3. EMITTER MARKING:CF MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissip.
WEJ
2SC3650
Part Number 2SC3650
Manufacturer WEJ
Title NPN Transistor
Description RoHS 2SC3650 2SC3650 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 1.2 A Collector-base voltage OV(BR)CBO: 30 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELEC.
Features Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 1.2 A Collector-base voltage OV(BR)CBO: 30 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter.
Sanyo Semicon Device
2SC3650
Part Number 2SC3650
Manufacturer Sanyo Semicon Device
Title NPN Epitaxial Planar Silicon Transistor
Description Ordering number : EN1780B 2SC3650 SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Applications • LF amplifiers, various drivers, muting circuit. Features • High DC current gain (hFE=800 to 3200). • Low.
Features
• High DC current gain (hFE=800 to 3200).
• Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
• Large current capacity (IC=1.2A).
• Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Curren.

similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC3651
Sanyo Semicon Device
NPN Transistor Datasheet
2 2SC3651
Kexin
Transistor Datasheet
3 2SC3652
Hitachi Semiconductor
SILICON NPN EPITAXIAL TRANSISTOR Datasheet
4 2SC3653
Sanyo
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS Datasheet
5 2SC3654
Sanyo Semicon Device
PNP / NPN Epitaxial Planar Silicon Transistors Datasheet
6 2SC3656
Sanyo
PNP/NPN Silicon Transistor Datasheet
7 2SC3657
Toshiba Semiconductor
NPN Transistor Datasheet
8 2SC3657
Inchange Semiconductor
Silicon NPN Power Transistors Datasheet
9 2SC3658
SavantIC
SILICON POWER TRANSISTOR Datasheet
10 2SC3658
Inchange Semiconductor
Silicon NPN Power Transistors Datasheet
More datasheet from GME
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad