Part Number | 2SC3650 |
Distributor | Stock | Price | Buy |
---|
Part Number | 2SC3650 |
Manufacturer | Kexin |
Title | Transistor |
Description | SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Ab. |
Features | High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jun. |
Part Number | 2SC3650 |
Manufacturer | SeCoS |
Title | NPN Silicon Epitaxial Planar Transistor |
Description | Elektronische Bauelemente 2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor FEATURES Small Flat Package. Large Current Capacity. High DC Current Gain Low VCE(sat) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 123 A EC 4 APPLICATION LF Amplifiers, Various Dr. |
Features | Small Flat Package. Large Current Capacity. High DC Current Gain Low VCE(sat) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 123 A EC 4 APPLICATION LF Amplifiers, Various Drivers, Muting Circuit MARKING CF PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch B F G H J D K L REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.3. |
Part Number | 2SC3650 |
Manufacturer | Jin Yu Semiconductor |
Title | Transistor |
Description | 2SC3650 SOT-89-3L TRANSISTOR (NPN) FEATURES Small Flat Package High DC Current Gain Low VCE(sat) Large Current Capacity APPLICATIONS LF Amplifiers, Various Drivers, Muting Circuit 1. BASE 2. COLLECTOR 3. EMITTER MARKING:CF MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO. |
Features |
Small Flat Package High DC Current Gain Low VCE(sat) Large Current Capacity APPLICATIONS LF Amplifiers, Various Drivers, Muting Circuit 1. BASE 2. COLLECTOR 3. EMITTER MARKING:CF MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissip. |
Part Number | 2SC3650 |
Manufacturer | WEJ |
Title | NPN Transistor |
Description | RoHS 2SC3650 2SC3650 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 1.2 A Collector-base voltage OV(BR)CBO: 30 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELEC. |
Features | Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 1.2 A Collector-base voltage OV(BR)CBO: 30 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter. |
Part Number | 2SC3650 |
Manufacturer | Sanyo Semicon Device |
Title | NPN Epitaxial Planar Silicon Transistor |
Description | Ordering number : EN1780B 2SC3650 SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Applications • LF amplifiers, various drivers, muting circuit. Features • High DC current gain (hFE=800 to 3200). • Low. |
Features |
• High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • Large current capacity (IC=1.2A). • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Curren. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3651 |
Sanyo Semicon Device |
NPN Transistor | |
2 | 2SC3651 |
Kexin |
Transistor | |
3 | 2SC3652 |
Hitachi Semiconductor |
SILICON NPN EPITAXIAL TRANSISTOR | |
4 | 2SC3653 |
Sanyo |
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
5 | 2SC3654 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors | |
6 | 2SC3656 |
Sanyo |
PNP/NPN Silicon Transistor | |
7 | 2SC3657 |
Toshiba Semiconductor |
NPN Transistor | |
8 | 2SC3657 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
9 | 2SC3658 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3658 |
Inchange Semiconductor |
Silicon NPN Power Transistors |