Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC3647 |
| Part Number | 2SC3647 |
| Manufacturer | Sanyo Semicon Device |
| Title | PNP / NPN Epitaxial Planar Silicon Transistor |
| Description | Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ul. |
| Features |
• Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) . |
2SC3647 |
| Part Number | 2SC3647 |
| Manufacturer | Kexin |
| Title | Transistor |
| Description | SMD Type High-Voltage Switching Applications 2SC3647 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector. |
| Features | Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC *. |
2SC3647 |
| Part Number | 2SC3647 |
| Manufacturer | ON Semiconductor |
| Title | Bipolar Transistor |
| Description | Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-. |
| Features |
• Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) V. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3640 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SC3642 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC3642 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3643 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC3644 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SC3645 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SC3645 |
Kexin |
Transistor |
|
| 8 | 2SC3645 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SC3646 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SC3646 |
Kexin |
Transistor |
|
Desde 2024. D4U Semiconductor.
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