2SC3637 Datasheet. existencias, precio

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2SC3637 NPN Triple Diffused Planar Silicon Transistor


2SC3637
Part Number 2SC3637
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SavantIC
2SC3637
Part Number 2SC3637
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-3PN package ·High voltage ,high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum rat.
Features Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ; IB=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VCE=900V; RBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V 8 MIN 500 2SC3637 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE TYP. MAX UNIT V 2.0 1.5 10 0.5 1.0 V V µA mA mA Switching times ts tf Storage time Fall .
Inchange Semiconductor
2SC3637
Part Number 2SC3637
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistors
Description ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ultrahigh-definition CRT display horizontal deflection output applicati.
Features B = 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 500V; IE= 0 ICES Collector Cutoff Current VCE= 900V; RBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V Switching Times tstg Storage Time tf Fall Time IC= 5A, IB1= 1A; IB2= -2A 2SC3637 .

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