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| Part Number | 2SC3551 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC3551 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amp. |
| Features | otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 900V; IE. |
| Part Number | 2SC3551 |
| Manufacturer | Fuji Electric |
| Title | Transistor |
| Description | www.DataSheet4U.com 2SC3551 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING FUJI POWER TRANSISTOR Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters General purpose pow. |
| Features | High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitter-Base voltage Collector curre. |
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