Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC3545 |
| Part Number | 2SC3545 |
| Manufacturer | Kexin |
| Title | NPN Silicon Epitaxial Transistor |
| Description | SMD Type NPN Silicon Epitaxial Transistor 2SC3545 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low Collector to Base Time Constant; CC rb’ b = 4 ps TYP. Low Feedback Capacitance; Cre = 0.48 pF TYP. 0.55 High Gain Bandwidth Procuct; fT =. |
| Features | 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 15 3.0 50 150 125 -65 to +125 Unit V V V mA mW Electrical Characteristics Ta =. |
2SC3545 |
| Part Number | 2SC3545 |
| Manufacturer | NEC |
| Title | NPN Silicon Transistor |
| Description | The 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature. It is designed for use in small type equ. |
| Features |
stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature. It is designed for use in small type equipments especially recommended for Hybrid Integrated Circuit and other applications.
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2
0.4 −0.05
+0.1
1.5
0.65 −0.15
+0.1
0.95 0.95
FEATURES
• High Gain Bandwidth Procuct; fT = 2 000 MHz TYP. • Low Col. |
2SC3545 |
| Part Number | 2SC3545 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN RF Transistor |
| Description | ·Low Base Time Constant; rbb’ • CC = 4 ps TYP. ·High Gain Bandwidth Product fT= 2 GHz TYP. @ IE= -5mA, VCE= 10V ·Low Feedback Capacitance; Cre = 0.48 pF TYP. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as . |
| Features |
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 12V; IE= 0
0.5
V
0.1 μA
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
50
250
fT
Current-Gain—Bandwidth Product
IE= -5mA ; VCE= 10V
1.3 2.0
GHz
Cre
Feedback Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
0.48 1.0 pF
rbb’ • CC Base Time Constant VCE= 10V,IE = -5mA,f = 31.9 M. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3540 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC3540 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3544 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 4 | 2SC3547 |
Toshiba Semiconductor |
NPN Transistor |
|
| 5 | 2SC3547 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 6 | 2SC3547A |
Toshiba Semiconductor |
NPN Transistor |
|
| 7 | 2SC3547A |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 8 | 2SC3547A |
Kexin |
Silicon NPN Transistor |
|
| 9 | 2SC3547B |
Toshiba Semiconductor |
NPN Transistor |
|
| 10 | 2SC3547B |
Kexin |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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