Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC3298 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC3298 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B ·Complement to Type 2SA1306/A/B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Dr. |
| Features | TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC3298 160 V(BR)CEO Collector-Emitter Breakdown Voltage 2SC3298A IC= 10mA; IB= 0 180 V 2SC3298B 200 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 500mA; VCE= 5V ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3292 |
Sanyo Semicon Device |
NPN Transistor |
|
| 2 | 2SC3293 |
Sanyo Semicon Device |
NPN Transistor |
|
| 3 | 2SC3294 |
Sanyo Semicon Device |
NPN Planar Silicon Transistor |
|
| 4 | 2SC3295 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC3295 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 6 | 2SC3296 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3296 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC3297 |
Toshiba |
Silicon NPN Transistor |
|
| 9 | 2SC3297 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC3297 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|