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2SC3277 NPN Triple Diffused Planar Silicon Transistor


2SC3277
Part Number 2SC3277
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INCHANGE
2SC3277
Part Number 2SC3277
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM R.
Features ctor-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A ICBO Collector Cutoff Current VCB= 400V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1.2A; VCE= 5V hFE-2 DC Current Gain IC= 6A.
SavantIC
2SC3277
Part Number 2SC3277
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-3PN package ·High voltage ,high current ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum r.
Features Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ;RBE=; IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=400V; IE=0 VEB=5V; IC=0 IC=1.2A ; VCE=5V IC=6A ; VCE=5V IC=1.2A ; VCE=10V IE=0 ; VCB=10V;f=1M.

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