Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC3235 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC3235 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage ·High switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for high voltage,high speed and high power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM. |
| Features | ollector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB=7V; IC= 0 hFE DC Current Gain IC= 0.1A ; VCE= 5V MIN TYP. MAX UNIT 400 V 1.0 V 1.5 V 100 μA 100 μA 20 50 NOTICE： ISC reserve. |
| Part Number | 2SC3235 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Excellent Switching Times t r=1.0As(Max.), tf=1.0/is(Max.) at Ic=0.8A . High Collector Breakdown Voltage : VcEO= 400V INDUSTRIAL APPLICATIONS Unit in m. |
| Features | . Excellent Switching Times t r=1.0As(Max.), tf=1.0/is(Max.) at Ic=0.8A . High Collector Breakdown Voltage : VcEO= 400V INDUSTRIAL APPLICATIONS Unit in mm 10.3 MAX . MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25 C Tc=25 C SYMBOL VcBO VCEO VEBO IB PC RATING 5. |
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|---|---|---|---|---|
| 1 | 2SC3230 |
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| 2 | 2SC3230 |
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| 3 | 2SC3231 |
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| 4 | 2SC3231 |
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| 5 | 2SC3233 |
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| 6 | 2SC3233 |
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| 7 | 2SC3236 |
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| 8 | 2SC3239 |
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| 9 | 2SC3200 |
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| 10 | 2SC3201 |
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Desde 2024. D4U Semiconductor.
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