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2SC3136 Silicon NPN Transistor Datasheet


2SC3136

Toshiba
2SC3136

Part Number 2SC3136
Manufacturer Toshiba (https://www.toshiba.com/)
Description 2SC3136 SILICON NPN EPITAXIAL PLANAR TYPE TV VHF MIXER APPLICATIONS. FEATURES . High Conversion Gain : G ce =2 3dB (Typ.) . Low Reverse Transfer...
Features . High Conversion Gain : G ce =2 3dB (Typ.) . Low Reverse Transfer Capacit ance : C r e=0.4pF (Typ .) — 5.1 MAX 1- Unit in mm ; 0.45 0.5 5 (145 -n rf ii i 1 4 °- 1 - S 01 c5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle...

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2SC3138

Kexin
2SC3138
Part Number 2SC3138
Manufacturer Kexin
Title Silicon NPN Transistor
Description SMD Type Silicon NPN Triple Diffused Type 2SC3138 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High voltage. VCBO = 200 .
Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperatur.

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2SC3138

Toshiba Semiconductor
2SC3138
Part Number 2SC3138
Manufacturer Toshiba Semiconductor
Title Silicon NPN Transistor
Description 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications High Voltage Switching Appl.
Features ) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SC3137

Toshiba
2SC3137
Part Number 2SC3137
Manufacturer Toshiba
Title Silicon NPN Transistor
Description 2SC3137 SILICON NPN EPITAXIAL PLANAR TYPE TV TUNER, UHF MIXER APPLICATIONS. VHF-UHF BAND RF AMPLIFIER APPLICATIONS. Unit in mm 4 MAXIMUM RATIN.
Features - - V DC Current Gain hFE VCE=10V, Ic=5mA 40 100 200 - Reverse Transfer Capacitance Ore VcB=10V, I E=0, f=lMHz - 0.65 0.9 pF Transition Frequency fT V CE=10V, I c =2mA 1500 2400 - MHz Conversion Gain Noise Figure Gee V CC =10V, I C =2mA, 12 17 - dB f=800MHz, NF - f T =8.

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2SC3135

Sanyo Semicon Device
2SC3135
Part Number 2SC3135
Manufacturer Sanyo Semicon Device
Title PNP/NPN Epitaxial Planar Silicon Transistors
Description Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features · High VEBO. · Wide.
Features
· High VEBO.
· Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1253 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Volt.

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