Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC2983 |
| Part Number | 2SC2983 |
| Manufacturer | Kexin |
| Title | NPN Transistor |
| Description | SMD Type NPN Silicon Epitaxial Transistor 2SC2983 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Transiton Frequency: Ft=100MHz(TYP.) +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.6. |
| Features | High Transiton Frequency: Ft=100MHz(TYP.) +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Base Cu. |
2SC2983 |
| Part Number | 2SC2983 |
| Manufacturer | GME |
| Title | Silicon NPN Transistor |
| Description | Silicon NPN Epitaxial Type FEATURES High transition frequency:fT=100MHz(typ). Complementary to 2SA1225. Pb Lead-free APPLICATIONS Power Amplifier Applications. Driver Stage Amplifier Applications. Production specification 2SC2983 TO-251 TO-252 MAXIMUM RATING operating temperature r. |
| Features |
High transition frequency:fT=100MHz(typ). Complementary to 2SA1225. Pb Lead-free APPLICATIONS Power Amplifier Applications. Driver Stage Amplifier Applications. Production specification 2SC2983 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 160 V VCEO Collector-Emitter Vol. |
2SC2983 |
| Part Number | 2SC2983 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon NPN Transistor |
| Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications 2SC2983 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating . |
| Features | mum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-03-10 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitte. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2981 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC2981 |
SavantIC |
Silicon power Transistor |
|
| 3 | 2SC2982 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC2982 |
Kexin |
Transistor |
|
| 5 | 2SC2982 |
TY Semiconductor |
Transistor |
|
| 6 | 2SC2983-O |
MCC |
NPN Transistor |
|
| 7 | 2SC2983-Y |
MCC |
NPN Transistor |
|
| 8 | 2SC2986 |
Toshiba |
Silicon NPN Transistor |
|
| 9 | 2SC2987 |
ETC |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
|
| 10 | 2SC2987 |
SavantIC |
Silicon power Transistor |
|
Desde 2024. D4U Semiconductor.
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