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| Part Number | 2SC2618 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC2618 |
| Manufacturer | Kexin |
| Title | Silicon NPN Epitaxial Transistor |
| Description | SMD Type Silicon NPN Epitaxial 2SC2618 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = . |
| Features | Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 35 35 4 500 150. |
| Part Number | 2SC2618 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon NPN Transistor |
| Description | 2SC2618 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1121 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2618 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cur. |
| Features | r saturation voltage Base to emitter voltage Note: Grade Mark hFE1 VCE(sat) VBE 60 10 — — V V I C = 150 mA, IB = 15 mA (Pulse test) VCE = 3 V, IC = 10 mA (Pulse test) 1. The 2SC2618 is grouped by h FE1 as follows. B RB 60 to 120 C RC 100 to 200 D RD 160 to 320 See characteristic curves of 2SC1213. 2 2SC2618 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 150 100 50. |
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|---|---|---|---|---|
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| 2 | 2SC2610 |
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| 10 | 2SC2613 |
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