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| Part Number | 2SC2582 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC2582 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB. |
| Features | ge IC= 1mA; IE= 0 45 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 35 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.5 V ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.1 μA ICEO Collector Cutoff Current VCE= 20V; IB= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 10V 85 340 hFE-2 DC C. |
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| 7 | 2SC2500 |
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| 9 | 2SC2500 |
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| 10 | 2SC2501 |
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Desde 2024. D4U Semiconductor.
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