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2SC2550 |
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| Part Number | 2SC2550 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC2550 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES . High Breakdown Voltage : VCEO=50V, VEB0=8V • High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA • Complementary to 2SA1090. Iln it in mm 05.8MAX. 04.95MAX. 25 00.45 [|[ j2f. |
| Features |
. High Breakdown Voltage : VCEO=50V, VEB0=8V • High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA • Complementary to 2SA1090. Iln it in mm 05.8MAX. 04.95MAX. 25 00.45 [|[ j2fe.54 MAXIMUM RATINGS fTa=25°r.^ CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL v CBO vCEO v EBO XC IB PC T J T stg RATING 60 50 8 200 50 300 175 -65VL75 UNIT V V 1. EMITTER V 2. BASE 3. COLLECTOR (CASE) mA TO 18 mA TC — 7, TB 8C mW °C. |
| Datasheet |
 2SC2550 Data Sheet
PDF 122.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2551 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC2551 |
SeCoS |
NPN Transistor |
|
| 3 | 2SC2551 |
LGE |
NPN Transistor |
|
| 4 | 2SC2552 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC2552 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC2552 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC2553 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | 2SC2553 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC2553 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2SC2555 |
Toshiba Semiconductor |
TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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