2SC2365 Datasheet. existencias, precio

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2SC2365 SILICON POWER TRANSISTOR


2SC2365
Part Number 2SC2365
Distributor Stock Price Buy
INCHANGE
2SC2365
Part Number 2SC2365
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCB.
Features -Emitter Saturation Voltage IC= 4A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A hFE DC Current Gain IC= 3A; VCE= 4V ICBO Collector Cutoff Current VCB= 600V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 2SC2365 MIN TYP. MAX UNIT 500 V 6 V 3.0 V 1.6 V 12 0.1 mA 0.1 mA 10 MHz Notice: ISC re.

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