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| Part Number | 2SC2270 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC2270 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VE. |
| Features | itter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IE=1mA ;IC=0 IC=4A; IB=0.1A IC=4A ; VCE=2V VCB=40V; IE=0 VEB=8V; IC=0 IC=0.5A ; VCE=2V IC=4A ; VCE=2V IC=0.5A ; VCE=2V IE=0;f=1MHz ; VCB=10V 140 70 MIN 20 8. |
| Part Number | 2SC2270 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector Power Dissipation PC=10W(Tc=25℃), PC=1.0W(Ta=25℃) ·High DC Current Gain : hFE=140~450@VCE=2V,IC=0.5A hFE=70(Min)@VCE=2V,IC=4A ·Low Collector Saturation Voltage VCE(sat)=1.0V(Max)@IC=4A,IB=0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC. |
| Features | i is registered trademark isc Silicon NPN Power Transistor 2SC2270 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 2V I. |
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| 2 | 2SC2271 |
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Desde 2024. D4U Semiconductor.
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