Distributor | Stock | Price | Buy |
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2SC2060 |
Part Number | 2SC2060 |
Manufacturer | JCET |
Title | NPN Transistor |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2060 TRANSISTOR (NPN) FEATURE z Power Dissipation PCM: 0.75 W (Ta=25℃) z Low Saturation Voltage (VCE(sat)=0.15V at 500mA) z Complementary Pair with 2SA934 TO-92L 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RA. |
Features | z Power Dissipation PCM: 0.75 W (Ta=25℃) z Low Saturation Voltage (VCE(sat)=0.15V at 500mA) z Complementary Pair with 2SA934 TO-92L 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-base voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction T. |
2SC2060 |
Part Number | 2SC2060 |
Manufacturer | BLUE ROCKET ELECTRONICS |
Title | Silicon NPN transistor |
Description | TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,, 2SA934 。 High PC, low collector saturation voltage, complementary pair with 2SA934. / Applications 1~2W 。 1~2W low frequency amplifiers. / Equivalent Circuit / Pinning 123 PIN1:Base PIN 2:Collector PIN 3. |
Features | ,, 2SA934 。 High PC, low collector saturation voltage, complementary pair with 2SA934. / Applications 1~2W 。 1~2W low frequency amplifiers. / Equivalent Circuit / Pinning 123 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range P 82~180 Q 120~270 R 180~390 http://www.fsbrec.com 1/6 2SC2060 Rev.E Mar.-2016 / Absolute Max. |
2SC2060 |
Part Number | 2SC2060 |
Manufacturer | LZG |
Title | SILICON NPN TRANSISTOR |
Description | 2SC2060(3DG2060) : 1~2W 。 NPN /SILICON NPN TRANSISTOR Purpose:1~2W low frequency amplifiers. :,, 2SA934(3CG934)。 Features: High PC, low collector saturation voltage, complementary pair with 2SA934(3CG934). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICP PC Tj Tstg. |
Features | High PC, low collector saturation voltage, complementary pair with 2SA934(3CG934). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICP PC Tj Tstg 40 32 5.0 1.0 2.0 750 150 -55~150 V V V A A mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=50μA IC=1.0mA IE=50μA VCB=2. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC2061 |
Rohm |
Medium Power Amp / NPN Silicon Transistor | |
2 | 2SC2062S |
Rohm |
High-gain Amplifier Transistor | |
3 | 2SC2063 |
Rohm |
RF Amplifier Epitaxial Planar NPN Silicon Transistors | |
4 | 2SC2068 |
Toshiba Semiconductor |
Silicon NPN Triple Diffused Type Transistor | |
5 | 2SC2000 |
NEC |
NPN SILICON TRANSISTOR | |
6 | 2SC2001 |
NEC |
NPN SILICON TRANSISTOR | |
7 | 2SC2001 |
MCC |
NPN Transistor | |
8 | 2SC2001 |
SeCoS |
NPN Plastic Encapsulated Transistor | |
9 | 2SC2001 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor | |
10 | 2SC2001 |
USHA |
Transistors |