Part Number | 2SC1826 |
Distributor | Stock | Price | Buy |
---|
Part Number | 2SC1826 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High breakdown voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B. |
Features | t) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 80V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 4V MIN TYP. MAX UNIT 60 V 1.0 V 1.5 V 100 μA 100 μA 40 320 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC1827 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
2 | 2SC1828 |
INCHANGE |
NPN Transistor | |
3 | 2SC1828 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC1803 |
ETC |
NPN Silicon Transistor | |
5 | 2SC1809 |
Rohm |
RF Amplifier / Epitaxial Planar NPN Silicon Transistor | |
6 | 2SC1809 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
7 | 2SC1810 |
ETC |
NPN Transistor | |
8 | 2SC1812 |
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR | |
9 | 2SC1815 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
10 | 2SC1815 |
Inchange Semiconductor |
Silicon NPN Power Transistor |