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2SC1678 |
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| Part Number | 2SC1678 |
| Manufacturer | INCHANGE |
| Description | ·Silicon NPN planar type ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 65 V VCEO Collecto. |
| Features | E(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICBO Collector Cutoff Current VCB= 30V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V hFE-2 DC Current Gain IC= 1.5A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product IC= 100mA; VCE= 5V MIN TYP. MAX UNIT 65 V 1.0 V 10 μA 1.0 μA 15 10 30 45 pF 100 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presente. |
| Datasheet |
 2SC1678 Data Sheet
PDF 181.56KB |
| Distributor | Stock | Price | Buy |
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2SC1678 |
| Part Number | 2SC1678 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB IE PC. |
| Features | mitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain DC current gain Collectpr output capacitance Transition frequency CONDITIONS IC=0.5A; IB=50m A IC=1mA; IE=0 IC=10mA; IB=0 IE=1mA; IC=0 VCB=30V;IE=0 VCE=20V;IB=0 IC=0.5A ; VCE=5V IC=1.5A ; VCE=5V IE=0 ; VCB=10V, f=1MHz IC=0.1A ; VCE=5V 100 15 10 65 65 4 MIN 2SC1678 SYMBOL VCE(sat) V(BR)CBO V(BR)CEO V. |
2SC1678 |
| Part Number | 2SC1678 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | SILICON NPN EPITAXIAL PLANAR TYPE 27 MHz POWER AMPLIFIER APPLICATIONS. FEATURES • Recommended for Output Stage Application of AM 4W Transmitter. • High Power Gain. Unit in mm 10.3 MA%, , 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage RRF.=10. |
| Features |
• Recommended for Output Stage Application of AM 4W Transmitter. • High Power Gain. Unit in mm 10.3 MA%, , 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage RRF.=10fi Emitter-Base Voltage Collector Current Base Current Emitter Current Collector Power Dissipation ( Tc-25°C ) Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERIST. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1672 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC1672 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC1674 |
NEC |
NPN SILICON TRANSISTOR |
|
| 4 | 2SC1674 |
Dc Components |
NPN Transistor |
|
| 5 | 2SC1674 |
SeCoS |
NPN Transistor |
|
| 6 | 2SC1674 |
Tiger Electronic |
Transistors |
|
| 7 | 2SC1674 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SC1674 |
JCET |
NPN Transistor |
|
| 9 | 2SC1674 |
SEMTECH |
NPN Silicon Transistor |
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| 10 | 2SC1674 |
USHA |
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Desde 2024. D4U Semiconductor.
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