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2SC1625 |
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| Part Number | 2SC1625 |
| Manufacturer | SavantIC |
| Description | ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SC1624 VCBO Collector-base voltage 2SC1625 2SC1624 VCEO Collecto. |
| Features | mA ; VCE=5V VCB=50V;IE=0 VEB=5V; IC=0 IC=150mA ; VCE=5V IC=500mA ; VCE=5V IE=0; VCB=10V;f=1MHz IC=150mA ; VCE=5V CONDITIONS 2SC1624 2SC1625 SYMBOL MIN 120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 100 5 0.5 1.0 1.0 1.0 70 40 20 30 pF MHz 240 V V V µA µA V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency hFE-1 Classifications O 70-140 Y 120-240 2 SavantI. |
| Datasheet |
 2SC1625 Data Sheet
PDF 122.60KB |
| Distributor | Stock | Price | Buy |
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2SC1625 |
| Part Number | 2SC1625 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Silicon NPN planar type ·Complementary to 2SA815 ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25. |
| Features | (BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(ON) Base-Emitter ON Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 50V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 150mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V COB Output Capacitance IE= 0; VC. |
2SC1625 |
| Part Number | 2SC1625 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | 2SC1 624' 2SC1 625, MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: High Breakdown Voltage : VCE0 =120V (2SC16 24) Complementary to 2SA814 and 2SA815. SILICON NPN PLANAR TYPE 10. 3 MAX. Unit in mm ^ 3.6 ±0-2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-. |
| Features | High Breakdown Voltage : VCE0 =120V (2SC16 24) Complementary to 2SA814 and 2SA815. SILICON NPN PLANAR TYPE 10. 3 MAX. Unit in mm ^ 3.6 ±0-2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC16 24 2SC1625 CollectorEmi tter Voltage 2SC16 24 2SC16 25 Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Te. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1621 |
NEC |
PNP Transistor |
|
| 2 | 2SC1621 |
Kexin |
NPN Silicon Transistor |
|
| 3 | 2SC1622 |
NEC |
NPN Transistor |
|
| 4 | 2SC1622A |
NEC |
NPN Transistor |
|
| 5 | 2SC1622A |
Kexin |
NPN Silicon Transistor |
|
| 6 | 2SC1623 |
NEC |
NPN Transistor |
|
| 7 | 2SC1623 |
GME |
Silicon Transistor |
|
| 8 | 2SC1623 |
UTC |
AMPLIFIER NPN TRANSISTOR |
|
| 9 | 2SC1623 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC1623 |
MCC |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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