2SC1624 |
Part Number | 2SC1624 |
Manufacturer | SavantIC |
Description | ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SC1624 VCBO Collector-base voltage 2SC1625 2SC1624 VCEO Collecto. |
Features | mA ; VCE=5V VCB=50V;IE=0 VEB=5V; IC=0 IC=150mA ; VCE=5V IC=500mA ; VCE=5V IE=0; VCB=10V;f=1MHz IC=150mA ; VCE=5V CONDITIONS 2SC1624 2SC1625 SYMBOL MIN 120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 100 5 0.5 1.0 1.0 1.0 70 40 20 30 pF MHz 240 V V V µA µA V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency hFE-1 Classifications O 70-140 Y 120-240 2 SavantI. |
Datasheet |
2SC1624 Data Sheet
PDF 122.60KB |
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2SC1624 |
Part Number | 2SC1624 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Silicon NPN planar type ·Complementary to 2SA814 ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25. |
Features | (BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(ON) Base-Emitter ON Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 50V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 150mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V COB Output Capacitance IE= 0; VC. |
2SC1624 |
Part Number | 2SC1624 |
Manufacturer | Toshiba |
Title | Silicon NPN Transistor |
Description | 2SC1 624' 2SC1 625, MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: High Breakdown Voltage : VCE0 =120V (2SC16 24) Complementary to 2SA814 and 2SA815. SILICON NPN PLANAR TYPE 10. 3 MAX. Unit in mm ^ 3.6 ±0-2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-. |
Features | High Breakdown Voltage : VCE0 =120V (2SC16 24) Complementary to 2SA814 and 2SA815. SILICON NPN PLANAR TYPE 10. 3 MAX. Unit in mm ^ 3.6 ±0-2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC16 24 2SC1625 CollectorEmi tter Voltage 2SC16 24 2SC16 25 Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Te. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC1621 |
NEC |
PNP Transistor | |
2 | 2SC1621 |
Kexin |
NPN Silicon Transistor | |
3 | 2SC1622 |
NEC |
NPN Transistor | |
4 | 2SC1622A |
NEC |
NPN Transistor | |
5 | 2SC1622A |
Kexin |
NPN Silicon Transistor | |
6 | 2SC1623 |
NEC |
NPN Transistor | |
7 | 2SC1623 |
GME |
Silicon Transistor | |
8 | 2SC1623 |
UTC |
AMPLIFIER NPN TRANSISTOR | |
9 | 2SC1623 |
INCHANGE |
NPN Transistor | |
10 | 2SC1623 |
MCC |
NPN Transistor |