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2SC1576 SILICON POWER TRANSISTOR

2SC1576


2SC1576
Part Number 2SC1576
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2SC1576

Toshiba
2SC1576
Part Number 2SC1576
Manufacturer Toshiba
Title Silicon NPN Transistor
Description : SILICON NPN TRIPLE DIFFUSED TYPE REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Voltage : VCBO=450V • Low Saturation Voltage : : VC E(sat)= 1.5V (Max.) (I C =5A, I B =0.8A) • High Speed Switching Time : t s tg=3.0ys (Typ.) INDUSTRIAL APPLICATIONS Unit in ram MAXIMU.
Features
• High Voltage : VCBO=450V
• Low Saturation Voltage : : VC E(sat)= 1.5V (Max.) (I C =5A, I B =0.8A)
• High Speed Switching Time : t s tg=3.0ys (Typ.) INDUSTRIAL APPLICATIONS Unit in ram MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage v CBO v CEO Emitter-Base Voltage Vebo Collector Current ic Base Current Collector Power Dissipa- tion (.

2SC1576

INCHANGE
2SC1576
Part Number 2SC1576
Manufacturer INCHANGE
Title NPN Transistor
Description ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base.
Features oltage IC=5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.8A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE DC Current Gain IC=1A; VCE= 5V ICBO Collector Cutoff Current VCB= 450V ; IE= 0 IEBO Emitter Cutoff Current VEB=7V; IC= 0 MIN TYP. MAX UNIT 1.5 V 1.8 V 330 V 7 V 30 150 100 uA.

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