2SC1114 Datasheet. existencias, precio

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2SC1114 NPN Transistor

2SC1114

2SC1114
2SC1114 2SC1114
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Part Number 2SC1114
Manufacturer INCHANGE
Description ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage .
Features mitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE DC Current Gain IC= 5.0A; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 12V; ftest= 1MHz MIN TYP. MAX UNIT 1.0 V 1.5 V 300 V 5 V 30 10 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in eq.
Datasheet Datasheet 2SC1114 Data Sheet
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2SC1114

SavantIC
2SC1114
Part Number 2SC1114
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Co.
Features voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=325V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=12V 20 10 MIN 300 325 7 2SC1114 TYP. MAX UNIT V V V 0.8 1.5 100 100 V V µA µA 2 SavantIC .


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