Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB979 |
| Part Number | 2SB979 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Darlington Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM. |
| Features | A VBE(on) Base -Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -3A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz MIN TYP. MAX UNIT -2.0 V -1.8 V -50 μA -50 μA. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB970 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SB970 |
Kexin |
Transistor |
|
| 3 | 2SB970 |
TY Semiconductor |
Transistor |
|
| 4 | 2SB974 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB974 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 6 | 2SB975 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB975 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 8 | 2SB976 |
Panasonic Semiconductor |
PNP Transistor |
|
| 9 | 2SB976 |
Panasonic Semiconductor |
Power Transistors |
|
| 10 | 2SB977 |
Panasonic Semiconductor |
PNP Epitaxial Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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