Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB967 |
| Part Number | 2SB967 |
| Manufacturer | Panasonic Semiconductor |
| Title | PNP Transistor |
| Description | Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter satur. |
| Features |
Unit nA µA V V
–18 –7 90 625 –1 120 85 VCE(sat) V MHz pF FE Rank classification P 90 to 135 Q 125 to 205 R 180 to 625 Rank hFE 1 Power Transistors PC — Ta 32 –6 TC=Ta 28 –5 IB= –40mA –35mA –30mA –25mA –4 –20mA –15mA –10mA –2 –5mA –1 4 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 –1mA 0 0 – 0.4 – 0.8 –10 TC=25˚C 2SB967 IC — VCE –12 VCE= –2V IC — VBE Collector power dissipation . |
2SB967 |
| Part Number | 2SB967 |
| Manufacturer | Panasonic |
| Title | Silicon PNP epitaxial planar type power transistor |
| Description | Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter satur. |
| Features |
Unit nA µA V V
–18 –7 90 625 –1 120 85 VCE(sat) V MHz pF FE Rank classification P 90 to 135 Q 125 to 205 R 180 to 625 Rank hFE 1 Power Transistors PC — Ta 32 –6 TC=Ta 28 –5 IB= –40mA –35mA –30mA –25mA –4 –20mA –15mA –10mA –2 –5mA –1 4 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 –1mA 0 0 – 0.4 – 0.8 –10 TC=25˚C 2SB967 IC — VCE –12 VCE= –2V IC — VBE Collector power dissipation . |
2SB967 |
| Part Number | 2SB967 |
| Manufacturer | Kexin |
| Title | Transistor |
| Description | SMD Type Silicon PNP Epitaxial Planar Type 2SB967 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Possible to solder the radiation fin directly to printed cicuit board. Low collector-emitter saturation voltage VCE(sat). +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15. |
| Features | Possible to solder the radiation fin directly to printed cicuit board. Low collector-emitter saturation voltage VCE(sat). +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Large collector current IC. 1 Base 2 Collector 3 Emitter Absolute Maximum Rat. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB962-Z |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 2 | 2SB962-Z |
Kexin |
PNP Transistor |
|
| 3 | 2SB962-Z |
Renesas |
PNP Transistor |
|
| 4 | 2SB963 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB963-Z |
NEC |
PNP Transistor |
|
| 6 | 2SB963-Z |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB965 |
NEC |
PNP Transistor |
|
| 8 | 2SB965 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB965 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 10 | 2SB966 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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