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| Part Number | 2SB921 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB921 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Complement to type 2SD1237 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Suitable for relay drivers,high-speed inverters,converters,and other general large current switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base B. |
| Features | se specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA; RBE=; IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-4A; IB=-0.4A VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-4A ; VCE=-2V IC=. |
| Part Number | 2SB921 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -4A ·Complement to Type 2SD1237 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for large current switching applications. ABSOLUTE MAXIMUM RATINGS. |
| Features | 1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -4A; VCE= -2V fT Current-Gain—Ban. |
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|---|---|---|---|---|
| 1 | 2SB920 |
Sanyo Semicon Device |
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| 2 | 2SB920 |
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| 3 | 2SB920L |
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| 4 | 2SB921L |
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| 5 | 2SB922 |
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| 7 | 2SB922 |
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| 8 | 2SB922L |
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| 9 | 2SB923 |
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| 10 | 2SB924 |
Inchange Semiconductor |
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Desde 2024. D4U Semiconductor.
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