Busque con el número de pieza junto con el fabricante o la descripción
2SB754 |
Click to view a larger image
| Part Number | 2SB754 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max) @IC= -4A ·Complement to Type 2SD844 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications ABSOLUT. |
| Features | se specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 -5 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -50 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -0.4 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -1V -1.2 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE-1 DC Current Gain IC= -1A; VCE= -1V 70 240 hFE-2 DC Current Gain IC= -4A; VCE= -1V 30 COB Output Capacitance IE= 0; VCB= -10V; ftest= . |
| Datasheet |
 2SB754 Data Sheet
PDF 195.59KB |
| Distributor | Stock | Price | Buy |
|---|
2SB754 |
| Part Number | 2SB754 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3P(I) package ·Complement to type 2SD844 ·High collector current :IC=-7A ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base . |
| Features | reakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IE=-10mA; IC=0 IC=-4.0A; IB=-0.4A IC=-4A ; VCE=-1V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IC=-1A ; VCE=-5V IE=0;f=1MHz ; VCB=-10V 70 30 10 MIN . |
2SB754 |
| Part Number | 2SB754 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES • High Collector Current : Ic=-7A • Low Collector Saturation Voltage : vCE(sat)=-0.4V (Max.) at I C=-4A • High Power Dissipation : Pc=60W at Tc=25°C • Complementary to 2SD844. . |
| Features |
• High Collector Current : Ic=-7A • Low Collector Saturation Voltage : vCE(sat)=-0.4V (Max.) at I C=-4A • High Power Dissipation : Pc=60W at Tc=25°C • Complementary to 2SD844. Unit in mm 0Z^±O.Z 7=?s > r-7. ES rfi 2.0±0.3, + 0.30 — 1.0 0.25 -O- u MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB753 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 2 | 2SB753 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB753 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB755 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 5 | 2SB755 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB755 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB757 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB757 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB703 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SB703 |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
|